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Creators/Authors contains: "Shi, Jianwei"

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  1. ; ; ; ; ; ; ; (, Journal of Physics D: Applied Physics)
    null (Ed.)
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  2. ; ; ; ; ; ; ; ; ; ; et al (, 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC))
    A thin layer of Al 2 O 3 at the back of CdSe x T e1-x /CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (V OC. ) Adding a p + amorphous silicon layer behind the Al 2 O 3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al 2 O 3 , amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl 2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage. 
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